HOME > Products > Sapphire
Sapphire is an ultra–high purity Single Crystal Material that is grown after melting Al203(Alumina) by heating it above 2000℃. It is the second hardest material on Earth after Diamond scaling 9 on Mohs Hardness. It has excellent insulating properties and optical transmittance with abrasion and corrosion resistance of about 10 times higher than the quartz.
Recently the rapid increase in the LED demand threw light on it again for its use as substrate material and its usage is drawing attention due to its solution to the Etching problem caused by HF and Plasma.
Keeping such characteristics of Sapphire such as Chemical and Heat resistance and high hardness, CMTX is replacing parts made of Ceramic and Quartz used in Semiconductor process with Sapphire. We are focusing on maximizing the yield and minimizing the generation of pollutants and particles. In addition due to the high durability of Sapphire material, the life span of the parts is increased and thereby contributing innovatively in reducing cost and increased product efficiency.
Parameters | |
---|---|
Crystal Structure | Hexagonal, a=4.765Å c=13.001Å |
Crystal Purity | >99.99% |
Density | 3.98g/cm3 Solid |
Hardness | 9(moh’s scale) |
Knoop Hardness | 1600 to 2200 |
Young’s Modulus | 380 GPa 30’ from c-axis / 340 GPa 60’ from c-axis |
Tensile Strength | 300 to 400 MPa, orientation and polish dependent |
Modulus of Rupture | 500 to 900 MPa, orientation and polish dependent |
Compressive Strength | 2000MPa |
Thermal Properties | |
---|---|
Melting point | 2053℃ |
Specific Heat | 0.10 cal/g at 20℃ |
Heat Capacity | 0.77 J/g℃ at 20℃ / 1.25 J/g℃ at 20℃ |
Thermal Conductivity | 46.06 at 0℃, 25.12 at 100℃, 12.56 at 400℃(W/(m.K)) |
Coefficient (25℃) | 4.5 X 10-6/K perpendicular to c-axis 5.3 X 10-6/K parallel to c-axis |
Dielectric Constant | ~9.4 at 300K at a-axis ~11.58 at 3000K at c-axis |
Loss Tangent at 10 GHze | < 2X 10-5 at a-axis, < 5X 10-5 at c-axis |
-Hardest matter after Diamond present on Earth.
Withstand 2,040℃ with no change in properties.
Chamber Etching in extreme NF3 and CF4 gas environment.
No radical reaction/minimum contamination.
Very stable Insulator/minimize arcing.
Plasma resistance of Sapphire
(Plasma resistance is more than 3 times better than quartz)
Corrosion measurement after 12 hours immersion in 49% HF concentration
→ Sapphire corrosion rate 0.5% vs Quartz corrosion rate 16.2%
* Test Condition: Plasma Nozzle 60/120 minutes.
* Test Result : Etching rate Of SiC 5 times more than Sapphire material.